Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot

Abstract

With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly-doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor species, we suggest is of a character more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex.

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• SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits
• Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography
• Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
• Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage
• Ionic Charge Distributions in Silicon Atomic Wires
• Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study