activity
20112025
most citedBinary Atomic Silicon Logic

126 citations · 457 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2025

Engineering Quantum Wire States for Atom Scale Circuitry

Max Yuan, Lucian Livadaru, Roshan Achal +3

Recent advances in hydrogen lithography on silicon surfaces now enable the fabrication of complex and error-free atom-scale circuitry. The structure of atomic wires, the most basic…

cond-mat.mtrl-sci2025★ 1 cited

Structural Control of Atomic Silicon Wires

Furkan M. Altincicek, Christopher C. Leon, Lucian Livadaru +5

Bare Si(100)-21 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations…

cond-mat.mtrl-sci2024★ 4 cited

Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length

Furkan M. Altincicek, Lucian Livadaru, Christopher C. Leon +6

Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band ga…

cond-mat.mtrl-sci2019★ 21 cited

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage

Roshan Achal, Mohammad Rashidi, Jeremiah Croshaw +2

Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum…

cond-mat.mtrl-sci2019★ 46 cited

Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot

Taleana Huff, Thomas Dienel, Mohammad Rashidi +4

With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here,…

cond-mat.mes-hall2017★ 19 cited

Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

Mohammad Rashidi, Erika Lloyd, Taleana R. Huff +4

We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electron…

cond-mat.mes-hall2017

All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess +5

The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of charac…

cond-mat.mes-hall2017★ 79 cited

Atomic White-Out: Enabling Atomic Circuitry Through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

Taleana Huff, Hatem Labidi, Mohammad Rashidi +4

We report the mechanically induced formation of a silicon-hydrogen covalent bond and its application in engineering nanoelectronic devices. We show that using the tip of a non-cont…

cond-mat.mtrl-sci2017★ 126 cited

Binary Atomic Silicon Logic

Taleana Huff, Hatem Labidi, Mohammad Rashidi +5

It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules a…

cond-mat.mes-hall2013★ 56 cited

Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface

Marco Taucer, Lucian Livadaru, Paul G. Piva +4

Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is…

quant-ph2011★ 105 cited

Tomography of a High-Purity Narrowband Photon From a Transient Atomic Collective Excitation

A. MacRae, T. Brannan, A. I. Lvovsky

We demonstrate the efficient heralded generation of high purity narrow-bandwidth single photons from a transient collective spin excitation in a hot atomic vapour cell. Employing o…