Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation

Abstract

We insert and manipulate a single chlorine atom in chlorine monolayer on a Si(100)-2x1 surface using a scanning tunneling microscope. Two objects were created - a Cl atom in a groove between two dimer rows, and bridge-bonded Cl on a silicon dimer. Changing the voltage polarity leads to conversion of the objects into each other. Anisotropic movement of the objects at 77 K is mediated by two different diffusion mechanisms: hopping and crowdion-like motion. Insertion of a Cl atom in a groove between two dimer rows leads to the formation of a dangling bond on a third-layer Si atom. At positive sample voltage bias, the first object is positively charged, while the second object can be neutral or negatively charged depending on silicon sample doping.

References in corpus (4)

• Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface
• Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
• First-Principle Study of Phosphine Adsorption on Si(001)-2$\times$1-Cl
• Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography

Cited by in corpus (3)

• Dangling bonds on the Cl- and Br-terminated Si(100) surfaces
• Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study
• Reactivity of the Si(100)-2$\times$1-Cl surface with respect to PH${}_3$, PCl${}_3$, and BCl${}_3$: Comparison with PH${}_3$ on Si(100)-2$\times$1-H