Dangling bonds on the Cl- and Br-terminated Si(100) surfaces

Abstract

Halogen monolayer on a silicon surface is attracting active attention for applications in electronic device fabrication with individual impurities. To create a halogen mask for the impurities incorporation, it is desirable to be able to remove a single halogen atom from the surface. We report the desorption of individual halogen atoms from the Si(100)-2x1-Cl and -Br surfaces in a scanning tunneling microscope (STM). Silicon dangling bonds (DBs) formed on the Si surface after halogen desorption were investigated using STM and the density functional theory. Three charge states: positive, neutral, and negative were identified. Our results show that the charge states of DBs can be manipulated, which will allow to locally tune the reactivity of the Cl- and Br-terminated Si(100) surfaces.

8 pages, 5 figures

References in corpus (4)

• Theoretical study of isolated dangling bonds, dangling bond wires and dangling bond clusters on H:Si(100)-(2$\times$1) surface
• Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale
• First-Principle Study of Phosphine Adsorption on Si(001)-2$\times$1-Cl
• Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation

Cited by in corpus (6)

• Roadmap on Atomic-scale Semiconductor Devices
• PBr3 Adsorption and Dissociation on the Si(100) Surface
• Calculations of pathways of precise P incorporation into chlorinated Si(100) surface
• Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state
• Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds
• Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface