29 citations · 68 across the 6 of their papers we have counts for
10 papers
Dangling bonds on the Cl- and Br-terminated Si(100) surfaces
T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin +1
Halogen monolayer on a silicon surface is attracting active attention for applications in electronic device fabrication with individual impurities. To create a halogen mask for the…
Reactivity of the Si(100)-21-Cl surface with respect to PH, PCl, and BCl: Comparison with PH on Si(100)-21-H
T. V. Pavlova, K. N. Eltsov
Despite the interest in a chlorine monolayer on Si(100) as an alternative to hydrogen resist for atomic-precision doping, little is known about its interaction with dopant-containi…
Ni-doped epitaxial graphene monolayer on the Ni(111) surface
S. L. Kovalenko, T. V. Pavlova, B. V. Andryushechkin +2
Nickel-doped graphene has been synthesized from propylene on a Ni(111) surface and studied using scanning tunneling microscopy (STM) and density functional theory (DFT). It is esta…
Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation
T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin +1
We insert and manipulate a single chlorine atom in chlorine monolayer on a Si(100)-2x1 surface using a scanning tunneling microscope. Two objects were created - a Cl atom in a groo…
Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study
T. V. Pavlova
An H atom inserted into hydrogen monolayer on the Si(100)-2x1 surface has been studied using the density functional theory. Hydrogen-induced defects were considered in their neutra…
Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography
T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin +2
We report the realization of STM-based lithography with silicon layers removal on the chlorinated Si(100)-2x1 surface at 77 K. In contrast to other STM lithography studies, we were…