First-Principle Study of Phosphine Adsorption on Si(001)-2$\times$1-Cl

Abstract

This paper presents a DFT study for phosphine adsorption on a Si(001)-2$\times$1 surface covered by a chlorine monolayer, including adsorption on local defects, i.e. mono- and bivacancies in the adsorbate layer (Cl, Cl${}_2$), and combined vacancies with removed silicon atoms (SiCl, SiCl${}_2$). Activation barriers were found for the adsorbing PH${}_3$ to dissociate into PH${}_2$+H and PH+H${}_2$ fragments; it was also established that phosphine dissociation on combined vacancies is possible at room temperature. If there is a silicon vacancy on the surface, phosphorus settles in the Si(001) lattice as PH (if the vacancy is SiCl) or as PH${}_2$ (if the vacancy is SiCl${}_2$). This paper suggests a method to plant a separate phosphorus atom into the silicon surface layer with atomic precision, using phosphine adsorption on defects specially created on a Si(001)-2$\times$1-Cl surface with an STM tip.

Cited by in corpus (2)

• Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation
• A model for atomic precision p-type doping with diborane on Si(100)-2$\times$1