PBr3 Adsorption and Dissociation on the Si(100) Surface

Abstract

The adsorption of PBr3 on the Si(100)-2$\times$1 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissociates on the Si(100) surface at room temperature into P and Br atoms. In most cases, the dissociated molecule was observed in STM on three neighboring Si dimers. DFT calculations confirm that the PBr3 molecule can completely dissociate at room temperature. After annealing the sample to 400${}^{\circ }$C, phosphorus is incorporated into silicon, as evidenced by the Si atoms ejected to the surface. These findings are useful for the insertion of individual phosphorus atoms into silicon by PBr3 adsorption through a halogen mask.

5 pages, 4 figures

References in corpus (11)

• Atomically precise placement of single dopants in Si
• Formation of Pt induced Ge atomic nanowires on Pt/Ge(001): a DFT study
• Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots
• STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)
• First-Principle Study of Phosphine Adsorption on Si(001)-2$\times$1-Cl
• Area-selective deposition and B $\delta$-doping of Si(100) with BCl${}_3$
• AlCl${}_3$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al
• Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography
• Structural studies of phosphorus induced dimers on Si(001)
• Dangling bonds on the Cl- and Br-terminated Si(100) surfaces
• Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state

Cited by in corpus (3)

• Roadmap on Atomic-scale Semiconductor Devices
• Calculations of pathways of precise P incorporation into chlorinated Si(100) surface
• STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)