26 citations · 139 across the 15 of their papers we have counts for
15 papers
STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)
Tatiana V. Pavlova, Vladimir M. Shevlyuga
The objective of miniaturizing doped areas in silicon, with the ultimate goal of achieving atomic-precision doping, requires a fundamental understanding of the dopant incorporation…
Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state
T. V. Pavlova, V. M. Shevlyuga
Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applicatio…
PBr3 Adsorption and Dissociation on the Si(100) Surface
Vladimir M. Shevlyuga, Yulia A. Vorontsova, Tatiana V. Pavlova
The adsorption of PBr3 on the Si(100)-21 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissoc…
Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface
T. V. Pavlova, V. M. Shevlyuga
Dangling bonds (DBs) are common defects in silicon that affect its electronic performance by trapping carriers at the in-gap levels. For probing the electrical properties of indivi…
Surface diffusion of phosphorus on Si(100) after PBr3 adsorption
T. V. Pavlova, V. M. Shevlyuga
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr mole…
Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds
T. V. Pavlova, V. M. Shevlyuga
The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and th…
PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies
T. V. Pavlova, V. M. Shevlyuga
For the most precise incorporation of single impurities in silicon, which is utilized to create quantum devices, a monolayer of adatoms on the Si(100) surface and a dopant-containi…
Dangling bonds on the Cl- and Br-terminated Si(100) surfaces
T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin +1
Halogen monolayer on a silicon surface is attracting active attention for applications in electronic device fabrication with individual impurities. To create a halogen mask for the…
Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation
T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin +1
We insert and manipulate a single chlorine atom in chlorine monolayer on a Si(100)-2x1 surface using a scanning tunneling microscope. Two objects were created - a Cl atom in a groo…
Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography
T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin +2
We report the realization of STM-based lithography with silicon layers removal on the chlorinated Si(100)-2x1 surface at 77 K. In contrast to other STM lithography studies, we were…
Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
L. V. Arapkina, V. A. Yuryev, K. V. Chizh +3
Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal…
Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C
L. V. Arapkina, V. A. Yuryev, V. M. Shevlyuga +1
The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO film decomposition has been in situ investigated by reflected h…
STM and RHEED study of the Si(001)-c(8x8) surface
Larisa V. Arapkina, Vladimir M. Shevlyuga, Vladimir A. Yuryev
The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnell…
Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study
L. V. Arapkina, V. M. Shevlyuga, V. A. Yuryev
A clean Si(001) surface thermally purified in an ultrahigh vacuum molecular-beam epitaxy chamber has been investigated by means of scanning tunneling microscopy. The morphological…
Atomic structure of silver chloride formed on Ag(111) surface upon low temperature chlorination
B. V. Andryushechkin, K. N. Eltsov, V. M. Shevlyuga
The structure of AgCl formed in the course of chlorine adsorption on Ag(111) surface was studied by STM. For the first time atomic resolution STM images of silver chloride were obt…