10 citations · 20 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2025★ 1 cited
Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface
T. V. Pavlova, V. M. Shevlyuga
Dangling bonds (DBs) are common defects in silicon that affect its electronic performance by trapping carriers at the in-gap levels. For probing the electrical properties of indivi…
cond-mat.mtrl-sci2025★ 2 cited
Surface diffusion of phosphorus on Si(100) after PBr3 adsorption
T. V. Pavlova, V. M. Shevlyuga
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr mole…
cond-mat.mtrl-sci2022★ 10 cited
Dangling bonds on the Cl- and Br-terminated Si(100) surfaces
T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin +1
Halogen monolayer on a silicon surface is attracting active attention for applications in electronic device fabrication with individual impurities. To create a halogen mask for the…