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Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
L. V. Arapkina, V. A. Yuryev, K. V. Chizh +3
Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal…
Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C
L. V. Arapkina, V. A. Yuryev, V. M. Shevlyuga +1
The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO film decomposition has been in situ investigated by reflected h…
STM and RHEED study of the Si(001)-c(8x8) surface
Larisa V. Arapkina, Vladimir M. Shevlyuga, Vladimir A. Yuryev
The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnell…