126 citations · 466 across the 18 of their papers we have counts for
18 papers
Engineering Quantum Wire States for Atom Scale Circuitry
Max Yuan, Lucian Livadaru, Roshan Achal +3
Recent advances in hydrogen lithography on silicon surfaces now enable the fabrication of complex and error-free atom-scale circuitry. The structure of atomic wires, the most basic…
Structural Control of Atomic Silicon Wires
Furkan M. Altincicek, Christopher C. Leon, Lucian Livadaru +5
Bare Si(100)-21 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length
Furkan M. Altincicek, Lucian Livadaru, Christopher C. Leon +6
Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band ga…
Ionic Charge Distributions in Silicon Atomic Wires
Jeremiah Croshaw, Taleana Huff, Mohamad Rashidi +4
Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at…
All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess +5
The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of charac…
Binary Atomic Silicon Logic
Taleana Huff, Hatem Labidi, Mohammad Rashidi +5
It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules a…
Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale
Mohammad Rashidi, Marco Taucer, Isil Ozfidan +6
Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but v…
Multiple Silicon Atom Artificial Molecules
John A. Wood, Mohammad Rashidi, Mohammad Koleini +2
We present linear ensembles of dangling bond chains on a hydrogen terminated Si(100) surface, patterned in the closest spaced arrangement allowed by the surface lattice. Local dens…
New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant
Hatem Labidi, Martin Kupsta, Taleana Huff +5
A new technique for the fabrication of highly sensitive qPlus sensor for atomic force microscopy (AFM) is described. Focused ion beam was used to cut then weld onto a bare quartz t…
Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
Hatem Labidi, Marco Taucer, Mohammad Rashidi +6
We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating…
Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics
Robert A. Wolkow, Lucian Livadaru, Jason Pitters +5
We review our recent efforts in building atom-scale quantum-dot cellular automata circuits on a silicon surface. Our building block consists of silicon dangling bond on a H-Si(001)…
Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon
Zahra Shaterzadeh-Yazdi, Lucian Livadaru, Marco Taucer +4
We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoret…
Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface
Marco Taucer, Lucian Livadaru, Paul G. Piva +4
Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is…
Nanoscale structuring of tungsten tip yields most coherent electron point-source
Josh Y. Mutus, Lucian Livadaru, Radovan Urban +3
This report demonstrates the most spatially-coherent electron source ever reported. A coherence angle of 14.3 +/- 0.5 degrees was measured, indicating a virtual source size of 1.7…
Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface
Lucian Livadaru, Jason Pitters, Marco Taucer +1
During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around iso…
Dangling-bond charge qubit on a silicon surface
Lucian Livadaru, Peng Xue, Zahra Shaterzadeh-Yazdi +5
Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the…
Controlled Coupling and Occupation of Silicon Atomic Quantum Dots
M. Baseer Haider, Jason L Pitters, Gino A. DiLabio +3
It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies…