126 citations · 466 across the 18 of their papers we have counts for
9 papers · 1 filter
All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess +5
The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of charac…
Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale
Mohammad Rashidi, Marco Taucer, Isil Ozfidan +6
Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but v…
Multiple Silicon Atom Artificial Molecules
John A. Wood, Mohammad Rashidi, Mohammad Koleini +2
We present linear ensembles of dangling bond chains on a hydrogen terminated Si(100) surface, patterned in the closest spaced arrangement allowed by the surface lattice. Local dens…
New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant
Hatem Labidi, Martin Kupsta, Taleana Huff +5
A new technique for the fabrication of highly sensitive qPlus sensor for atomic force microscopy (AFM) is described. Focused ion beam was used to cut then weld onto a bare quartz t…
Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
Hatem Labidi, Marco Taucer, Mohammad Rashidi +6
We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating…
Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon
Zahra Shaterzadeh-Yazdi, Lucian Livadaru, Marco Taucer +4
We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoret…
Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface
Marco Taucer, Lucian Livadaru, Paul G. Piva +4
Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is…
Nanoscale structuring of tungsten tip yields most coherent electron point-source
Josh Y. Mutus, Lucian Livadaru, Radovan Urban +3
This report demonstrates the most spatially-coherent electron source ever reported. A coherence angle of 14.3 +/- 0.5 degrees was measured, indicating a virtual source size of 1.7…
Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface
Lucian Livadaru, Jason Pitters, Marco Taucer +1
During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around iso…