activity
20172020
most citedResolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

19 citations · 20 across the 3 of their papers we have counts for

collaborators

6 papers

physics.optics2020

Chiral high-harmonic generation and spectroscopy on solid surfaces using polarization-tailored strong fields

Tobias Heinrich, Marco Taucer, Ofer Kfir +4

Strong-field methods in solids enable new strategies for ultrafast nonlinear spectroscopy and provide all-optical insights into the electronic properties of condensed matter in rec…

cond-mat.mes-hall20201 cited

Wannier quasi-classical approach to high harmonic generation in semiconductors

Andrew M. Parks, Guilmot Ernotte, Adam Thorpe +4

We develop a quasi-classical theory of high harmonic generation in semiconductors based on an interband current that has been transformed from Bloch to Wannier basis. The Wannier q…

physics.optics2018

Spin constrained orbital angular momentum control in high-harmonic generation

F. Kong, C. Zhang, H. Larocque +7

The interplay between spin and orbital angular momentum in the up-conversion process allows us to control the macroscopic wave front of high harmonics by manipulating the microscop…

cond-mat.mes-hall2018

A Gauge Invariant Formulation of Interband and Intraband Currents in Solids

Guilmot Ernotte, T. J. Hammond, Marco Taucer

Experiments and simulations in solid-state high harmonic generation often make use of the distinction between interband and intraband currents. These two contributions to the total…

cond-mat.mes-hall201719 cited

Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

Mohammad Rashidi, Erika Lloyd, Taleana R. Huff +4

We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electron…

cond-mat.mes-hall2017

All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess +5

The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of charac…