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20112026
most citedSingle Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface

56 citations · 374 across the 19 of their papers we have counts for

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12 papers · 1 filter

cond-mat.mes-hall2025

Inverted-Mode Scanning Tunneling Microscopy for Atomically Precise Fabrication

Eduardo Barrera, Bheeshmon Thanabalasingam, Rafik Addou +57

Scanning Tunneling Microscopy (STM) enables fabrication of atomically precise structures with unique properties and growing technological potential. However, reproducible manipulat…

cond-mat.mes-hall2020★ 1 cited

Wannier quasi-classical approach to high harmonic generation in semiconductors

Andrew M. Parks, Guilmot Ernotte, Adam Thorpe +4

We develop a quasi-classical theory of high harmonic generation in semiconductors based on an interband current that has been transformed from Bloch to Wannier basis. The Wannier q…

cond-mat.mes-hall2018★ 32 cited

A Gauge Invariant Formulation of Interband and Intraband Currents in Solids

Guilmot Ernotte, T. J. Hammond, Marco Taucer

Experiments and simulations in solid-state high harmonic generation often make use of the distinction between interband and intraband currents. These two contributions to the total…

cond-mat.mes-hall2017★ 19 cited

Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

Mohammad Rashidi, Erika Lloyd, Taleana R. Huff +4

We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electron…

cond-mat.mes-hall2017

All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess +5

The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of charac…

cond-mat.mes-hall2016★ 44 cited

Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Mohammad Rashidi, Marco Taucer, Isil Ozfidan +6

Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but v…

cond-mat.mes-hall2015★ 14 cited

New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant

Hatem Labidi, Martin Kupsta, Taleana Huff +5

A new technique for the fabrication of highly sensitive qPlus sensor for atomic force microscopy (AFM) is described. Focused ion beam was used to cut then weld onto a bare quartz t…

cond-mat.mes-hall2015★ 52 cited

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Hatem Labidi, Marco Taucer, Mohammad Rashidi +6

We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating…

cond-mat.mes-hall2013★ 16 cited

Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon

Zahra Shaterzadeh-Yazdi, Lucian Livadaru, Marco Taucer +4

We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoret…

cond-mat.mes-hall2013★ 56 cited

Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface

Marco Taucer, Lucian Livadaru, Paul G. Piva +4

Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is…

cond-mat.mes-hall2012★ 29 cited

Consequences of Many-cell Correlations in Treating Clocked Quantum-dot Cellular Automata Circuits

Marco Taucer, Faizal Karim, Konrad Walus +1

Quantum-dot Cellular Automata (QCA) provides a basis for classical computation without transistors. Many simulations of QCA rely upon the so-called Intercellular Hartree Approximat…

cond-mat.mes-hall2011★ 36 cited

Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface

Lucian Livadaru, Jason Pitters, Marco Taucer +1

During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around iso…