56 citations · 374 across the 19 of their papers we have counts for
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cond-mat.mes-hall2017★ 19 cited
Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State
Mohammad Rashidi, Erika Lloyd, Taleana R. Huff +4
We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electron…
cond-mat.mes-hall2017
All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess +5
The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of charac…