Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

Abstract

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics.

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Cited by in corpus (37)

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• WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
• Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene MoS2 van der Waals Heterojunction
• Minimizing Residues and Strain in 2D Materials Transferred from PDMS
• 2D MoS2-Graphene-based multilayer van der Waals heterostructures: Enhanced charge transfer and optical absorption, and electric-field tunable Dirac point and band gap
• Microsecond dark-exciton valley polarization memory in 2D heterostructures
• Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers
• Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope
• Growth and electronic structure of epitaxial single-layer WS${}_2$ on Au(111)
• Structure, preparation, and applications of 2D material-based metal-semiconductor heterostructures
• Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure
• Strain Engineering a $4a\times \sqrt{3}a$ Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe${}_2$
• Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure
• Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
• One-dimensional van der Waals heterojunction diode
• Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale
• Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS${}_2$/2H-MoS${}_2$ T-Junction
• Bursting and excitability in neuromorphic resonant tunneling diodes
• Electrical control of inter-layer excitons in van der Waals heterostructures
• Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement
• Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer
• Locking of magnetization and Josephson oscillations at ferromagnetic resonance in ${\phi }_0$ junction under external radiation
• Twist versus heterostrain control of optical properties of moiré exciton minibands
• Tunneling spectroscopy of localized states of ${\mathrm{WS}}_2$ barriers in vertical van der Waals heterostructures
• Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures
• Thickness characterization of atomically-thin WSe${}_2$ on epitaxial graphene by low-energy electron reflectivity oscillations
• Electronic Transport and Thermopower in 2D and 3D Heterostructures--A Theory Perspective
• Anisotropic strain effects in small-twist-angle graphene on graphite
• In-situ scanning tunneling microscopy observation of thickness-dependent air-sensitive layered materials and heterodevices
• Characteristics of Interlayer Tunneling Field Effect Transistors Computed by a "DFT-Bardeen" Method
• Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study
• Tuning the electronic properties of hydrogen passivated C3N nanoribbons through van der Waals stacking