Tunneling spectroscopy of localized states of ${\mathrm{WS}}_2$ barriers in vertical van der Waals heterostructures

Abstract

In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here, we study localized states in ${\mathrm{WS}}_2$ and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/${\mathrm{WS}}_2$/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Applying a perpendicular magnetic field, we observe a shift in the energies of the quantum levels and information about the orbital magnetic moment of the localized states is extracted.

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Cited by in corpus (7)

• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Spin-valley locking for in-gap quantum dots in a MoS2 transistor
• Spectroscopy of $NbS{e}_2$ using Energy-Tunable Defect-Embedded Quantum Dots
• Quantum-Dot Assisted Spectroscopy of Degeneracy-Lifted Landau Levels in Graphene
• Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
• A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
• Charge quenching at defect states in transition metal dichalcogenide-graphene van der Waals heterobilayers