Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

Abstract

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.

References in corpus (8)

• Ultrahigh electron mobility in suspended graphene
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Chaotic Dirac billiard in graphene quantum dots
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Electrical Transport Properties of Single-Layer WS2
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• Mono- and Bilayer WS2 Light-Emitting Transistors
• A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

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