activity
20122015
most citedCross-Kerr effect on an optomechanical system

102 citations · 300 across the 7 of their papers we have counts for

collaborators

8 papers

quant-ph2015★ 102 cited

Cross-Kerr effect on an optomechanical system

Wei Xiong, Da-Yu Jin, Yueyin Qiu +2

We study cross-Kerr (CK) effect on an optomechanical system driven by two-tone fields. We show that in the presence of the CK effect, a bistable behavior of the mean photon number…

cond-mat.mes-hall2015★ 47 cited

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

Xiang-Xiang Song, Zhuo-Zhi Zhang, Jie You +5

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Cou…

quant-ph2015★ 45 cited

Coherence times of precisely depth controlled NV centers in diamond

Junfeng Wang, Wenlong Zhang, Jian Zhang +8

We investigated the depth dependence of coherence times of nitrogen-vacancy (NV) centers through precisely depth controlling by a moderately oxidative at 580°C in air. By successiv…

cond-mat.mes-hall2015★ 88 cited

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Xiang-Xiang Song, Di Liu, Vahid Mosallanejad +8

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. Wit…

cond-mat.supr-con2014

Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces

Yin-Long Han, Sheng-Chun Shen, Jie You +10

Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO inter…

cond-mat.mes-hall2014★ 18 cited

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

Hai-Ou Li, Gang Cao, Ming Xiao +6

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on…