Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

Abstract

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

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Cited by in corpus (7)

• Coupling two distant double quantum dots to a microwave resonator
• Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
• Charge noise suppression in capacitively coupled singlet-triplet spin qubits under magnetic field
• Impact of silicon doping on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures
• Highly tunable 2D silicon quantum dot array with coupling beyond nearest neighbors
• Theory of interaction-dependent instability in quantum detection by means of Luttinger liquid tunnel junction: a rigorous theorem
• Phonon-assisted transport and hole-phonon coupling in GaAs double quantum dots