Impact of silicon doping on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures

Abstract

We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon doping density has been varied from $2.4\times 10^{18}c{m}^{-3}$ (critically doped) to $6.0\times 10^{18}c{m}^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short time scale telegraphic noise and long time scale conductance drift with decreased doping density was observed. These measurements indicate that the {\it neutral} doping region plays a significant role in charge noise and conductance drift.

12 pages, 6 figures

References in corpus (5)

• Noise suppression using symmetric exchange gates in spin qubits
• In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices
• Modulation of Noise in Submicron GaAs/AlGaAs Hall Devices by Gating
• Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device
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Cited by in corpus (2)

• Fast raster scan multiplexed charge stability measurements toward high-throughput quantum dot array calibration
• Long-range spin transport in asymmetric quadruple quantum dots configurations