Intrinsic and extrinsic origins of low-frequency noise in GaAs/AlGaAs Schottky-gated nanostructures

Abstract

We study low-frequency noise in current passing through quantum point contacts fabricated from several GaAs/AlGaAs heterostructures with different layer structures and fabrication processes. In contrast to previous reports, there is no gate-dependent random telegraph noise (RTN) originating from tunneling through a Schottky barrier in devices fabricated using the standard low-damage process. Gate-dependent RTN appears only in devices fabricated with a high-damage process that induces charge trap sites. We show that the insertion of AlAs/GaAs superlattices in the AlGaAs barrier helps to suppress trap formation. Our results enable the fabrication of damage-resistant and thus low-noise devices.

13 pages, 4 figures

References in corpus (1)

• In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices

Cited by in corpus (6)

• Spin relaxation in a Si quantum dot due to spin-valley mixing
• Spin Relaxation due to Charge Noise
• Do micromagnets expose spin qubits to charge and Johnson noise?
• Heat currents in electronic junctions driven by telegraph noise
• Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot
• Impact of silicon doping on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures