AlGaAs/GaAs single electron transistors fabricated without modulation doping

Abstract

We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak lineshape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved.

4 pages, 4 figures

References in corpus (2)

• In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices
• Ballistic transport in induced one-dimensional hole systems

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• A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor
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