Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor
arXiv:1312.5410 · doi:10.1063/1.4858958
Abstract
Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust electronic properties after thermal cycling. However these devices require a large top-gate which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here we demonstrate rf reflectometry is possible in an undoped SET.
Four pages, three figures, one supplementary file
References in corpus (6)
- Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
- Coherent spin manipulation in an exchange-only qubit
- In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices
- Ballistic transport in induced one-dimensional hole systems
- An in-situ tunable radio-frequency quantum point contact
- Radio-frequency reflectometry on large gated 2-dimensional systems