Radio-frequency reflectometry on large gated 2-dimensional systems
arXiv:0810.5184 · doi:10.1063/1.3030860
Abstract
We have embedded an AlGaAs/GaAs based, gated 2D hole system (2DHS) into an impedance transformer circuit, and show that by using radio-frequency reflectometry it is possible to perform sensitive, large bandwidth, electrical resistance measurements of 2D systems at mK temperatures. We construct a simple lumped element model where the gated 2DHS is described as a resistive transmission line. The model gives a qualitative understanding of the experimental results. As an example, we use our method to map out the Landau level evolution in a 2DHS as a function of magnetic field and gate voltage.
8 pages, 8 figures. Accepted for publication in Review of Scientific Instruments
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- Fabrication and characterization of an induced GaAs single hole transistor
- Wide-band current preamplifier for conductance measurements with large input capacitance
- RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
- Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor
- Non-linear spin filter for non-magnetic materials at zero magnetic field