Nonexponential Relaxations in a Two-Dimensional Electron System in Silicon

Abstract

The relaxations of conductivity have been studied in a strongly disordered two-dimensional (2D) electron system in Si after excitation far from equilibrium by a rapid change of carrier density n_s at low temperatures T. The dramatic and precise dependence of the relaxations on n_s and T strongly suggests (a) the transition to a glassy phase as T->0, and (b) the Coulomb interactions between 2D electrons play a dominant role in the observed out-of-equilibrium dynamics.

5 pages, 5 figures

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Cited by in corpus (18)

• Electron Glass Dynamics
• Mean field theory for the three-dimensional Coulomb glass
• A mean-field model for the electron glass dynamics
• Density of States and Critical Behavior of the Coulomb Glass
• An Intermediate Phase at the Metal-Insulator Boundary in a Magnetically Doped Two-Dimensional Electron System
• Nonequilibrium Relaxations and Aging Effects in a Two-Dimensional Coulomb Glass
• Critical Behavior of a Strongly Disordered 2D Electron System: The Cases of Long-Range and Screened Coulomb Interactions
• Coexistence of anomalous field effect and mesoscopic conductance fluctuations in granular aluminium
• Aging Effects Across the Metal-Insulator Transition in Two Dimensions
• Numerical observation of a glassy phase in the three-dimensional Coulomb glass
• Conductance noise in an out-of-equilibrium two-dimensional electron system
• Radio-frequency reflectometry on large gated 2-dimensional systems
• Logarithmic relaxation and stress aging in the electron glass
• Aging and memory in a two-dimensional electron system in Si
• Screening the Coulomb interaction leads to a prethermal regime in two-dimensional bad conductors
• Beyond being free: glassy dynamics of SrTiO${}_3$-based two-dimensional electron gas
• Electrical glassy behavior in granular aluminium thin films
• Charge avalanches and depinning in the Coulomb glass: The role of long-range interactions