Aging and memory in a two-dimensional electron system in Si
arXiv:0911.1343 · doi:10.1016/j.physb.2008.11.041
Abstract
The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass transition density), the nonexponential relaxations exhibit aging and memory effects at low temperatures T. The aging properties change abruptly at the critical density for the metal-insulator transition n_c < n_g. The observed complex dynamics of the electronic transport is strikingly similar to that of other systems that are far from equilibrium.
Proceedings of ECRYS-2008
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