An Intermediate Phase at the Metal-Insulator Boundary in a Magnetically Doped Two-Dimensional Electron System

Abstract

A magnetotransport study in magnetically doped (Cd,Mn)Te 2D quantum wells reveals an apparent metal-insulator transition as well as an anomalous intermediate phase just on its metallic side. This phase is characterized by colossal magnetoresistance-like phenomena, which are assigned to the phase separation of the electron fluid and the associated emergence of ferromagnetic bubbles.

5 pages, 4 figures, title changed, text rewritten

References in corpus (7)

• Complexity in Strongly Correlated Electronic Systems
• Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
• Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films
• Nonexponential Relaxations in a Two-Dimensional Electron System in Silicon
• Monte Carlo simulations of ferromagnetism in p-CdMnTe quantum wells
• Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen
• Hysteresis and Noise in Stripe and Clump Forming Systems

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• Colossal magnetoresistance in an ultra-clean weakly interacting 2D Fermi liquid
• Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
• Fingerprints of intrinsic phase separation: magnetically doped two-dimensional electron gas
• Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content
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• From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins