Self-generated electronic heterogeneity and quantum glassiness in the high temperature superconductors

Abstract

We present a systematic study of the spin and charge dynamics of copper oxide superconductors as a function of carrier concentration $x$. Our results portray a coherent physical picture, which reveals a quantum critical point at optimum doping ($x=x_{opt}$), and the formation of an inhomogeneous glassy state at $x<x_{opt}$. This mechanism is argued to arise as an intrinsic property of doped Mott insulators, and therefore to be largely independent of material quality and level of disorder.

4 pages, 4 figures

References in corpus (2)

• A `checkerboard' electronic crystal state in lightly hole-doped Ca_{2-x}Na_{x}CuO_{2}Cl_{2}
• Mechanism of hopping transport in disordered Mott insulators

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