Electronic phase separation in lightly-doped LaSrCuO
arXiv:cond-mat/0111228 · doi:10.1103/PhysRevB.65.134515
Abstract
The hole concentration dependence of the magnetic correlations is studied in very lightly-doped LaSrCuO (0.02), which shows coexistence of a three-dimensional antiferromagnetic (AF) long-range ordered phase and a spin-glass phase at low temperatures. It is found that the spin-glass phase in the coexistence region also shows a diagonal spin modulation as in the pure spin-glass phase in LaSrCuO (0.020.055). Below 0.02 the diagonal stripe structure is the same as that in 0.02 with a volume fraction almost proportional to hole concentration, suggesting that electronic phase separation of the doped holes occurs so that some regions with hole concentration 0.02 and the rest with 0 are formed. This result also indicates that the transition between the AF and spin-glass phase around =0.02 is first order.
submitted to Phys. Rev. B, 6 pages
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