Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

Abstract

Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

5 pages, 3 figures

References in corpus (1)

• Domain-wall resistance in ferromagnetic (Ga,Mn)As

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