Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

Abstract

We present an experimental investigation of the magnetic, electrical and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y less than or equal to 0.3. X-ray diffraction measurements reveal that the layers are under tensile strain which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increase as the phosphorous concentration is increased. The resistivity of all samples shows metallic behaviour with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy.

References in corpus (3)

• Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
• Domain imaging and domain wall propagation in (Ga,Mn)As thin films with tensile strain
• Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

Cited by in corpus (4)

• Optical spin transfer torque driven domain wall motion in ferromagnetic semiconductor
• Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP
• High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
• A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP