Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
arXiv:0807.1469 · doi:10.1063/1.2991355
Abstract
We present an experimental investigation of the magnetic, electrical and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y less than or equal to 0.3. X-ray diffraction measurements reveal that the layers are under tensile strain which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increase as the phosphorous concentration is increased. The resistivity of all samples shows metallic behaviour with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy.
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- High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
- Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
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- A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP
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