Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

Abstract

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.

References in corpus (2)

• Domain imaging and domain wall propagation in (Ga,Mn)As thin films with tensile strain
• Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

Cited by in corpus (4)

• Surface acoustic wave driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers
• Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
• Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth temperature dependence, lattice constant, location of Fe atoms, and their relevance to the magnetic properties
• Direct probing of band-structure Berry phase in diluted magnetic semiconductors