Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer

Abstract

We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy is controlled by the gate voltage of a field effect device. Anomalous Hall Effect measurements confirm that a depletion of carriers in the upper (Ga,Mn)As layer results in the decrease of the in-plane anisotropy. The uniaxial anisotropy field is found to decrease by a factor ~ 4 over the explored gate-voltage range, so that the transition to an out-of-plane easy-axis configuration is almost reached.

References in corpus (7)

• Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As
• Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As
• Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As
• Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs
• Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
• Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains
• Low voltage control of ferromagnetism in a semiconductor p-n junction

Cited by in corpus (4)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Common universal behaviors of magnetic domain walls driven by spin-polarized electrical current and magnetic field
• Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices