activity
20072009
most citedPolariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

447 citations · 1.5k across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.other2009★ 45 cited

Exciton polaritons in two-dimensional photonic crystals

Daniele Bajoni, Dario Gerace, Matteo Galli +7

Experimental evidence of strong coupling between excitons confined in a quantum well and the photonic modes of a two-dimensional dielectric lattice is reported. Both resonant scatt…

quant-ph2008★ 15 cited

Transient chirp in high speed photonic crystal quantum dots lasers with controlled spontaneous emission

Remy Braive, Sylvain Barbay, Isabelle Sagnes +3

We report on a series of experiments on the dynamics of spontaneous emission controlled nanolasers. The laser cavity is a photonic crystal slab cavity, embedding self-assembled qua…

cond-mat.mtrl-sci2008★ 216 cited

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

M. Tran, H. Jaffres, C. Deranlot +4

We report on spin injection experiments at a Co/AlO/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $Δ…

physics.optics2008★ 28 cited

Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer

J. Bellessa, C. Symonds, C. Meynaud +5

We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructu…

cond-mat.mes-hall2008★ 160 cited

Hole - Nuclear Spin Interaction in Quantum Dots

B. Eble, C. Testelin, P. Desfonds +7

We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show…

cond-mat.mtrl-sci2008★ 65 cited

Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

Aristide Lemaître, Audrey Miard, Laurent Travers +6

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or…