Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer

Abstract

We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization.

arXiv comment5 pages, 5 figures

References in corpus (2)

• Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
• Enhancement of spontaneous emission in a quantum well by resonant surface plasmon coupling

Cited by in corpus (5)

• Coherent coupling between surface plasmons and excitons in semiconductor nanocrystals
• Theory of the strong coupling between quantum emitters and propagating surface plasmons
• Strong coupling of localized plasmons and molecular excitons in nanostructured silver films
• Exciton radiative decay through plasmon modes in planar metal-semiconductor structures
• Localized all-optical control of single semiconductor quantum dots through plasmon-polariton-induced screening