Enhancement of spontaneous emission in a quantum well by resonant surface plasmon coupling

Abstract

Using time-resolved photoluminescence measurements, the recombination rate in an In${}_{0.18}$Ga${}_{0.82}$N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than normal QW spontaneous emission. A calculation, based on Fermi's golden rule, reveals the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QWs placed closer to the surface metal coating.

Submitted to Phys. Rev. B

Cited by in corpus (9)

• Quantum Plasmonics
• Strong Off-Resonant Enhancement of Spontaneous Emission in Metal-Dielectric-Metal Plasmon Waveguide Structures
• Dissipative dynamics of a solid-state qubit coupled to surface plasmons: from non-Markov to Markov regimes
• Surface plasmon enhancement of spontaneous emission in graphene waveguides
• Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer
• Coupling of spontaneous emission from GaN/AlN quantum dots into silver surface plasmons
• Exciton radiative decay through plasmon modes in planar metal-semiconductor structures
• Tamm-Langmuir surface waves
• Coupling of guided Surface Plasmon Polaritons to proximal self-assembled InGaAs Quantum Dots