Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

Abstract

The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation induced by the ps-ASP allowed us to model very accurately the resulting signal, and interpret it as the strain modulated reflectivity (differing for ${\sigma }_{\pm }$ probe polarizations), independently from dynamic magnetization effects.

6 pages, 5 figures

References in corpus (7)

• Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As
• GaMnAs-based hybrid multiferroic memory device
• Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
• Ultrafast Enhancement of Ferromagnetism via Photoexcited Holes in GaMnAs
• Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
• Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
• Light-induced magnetization precession in GaMnAs

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