activity
20102022
most citedSpin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction

366 citations · 987 across the 13 of their papers we have counts for

collaborators

13 papers

cs.ET2022★ 1 cited

Memristive, Spintronic, and 2D-Materials-Based Devices to Improve and Complement Computing Hardware

Dovydas Joksas, AbdulAziz AlMutairi, Oscar Lee +5

In a data-driven economy, virtually all industries benefit from advances in information technology -- powerful computing systems are critically important for rapid technological pr…

cond-mat.mtrl-sci2021

Manipulation of magnetic skyrmions in continuous Ir/Co/Pt multilayers

M. Cubukcu, S. Pollath, S. Tacchi +9

We show that magnetic skyrmions can be stabilized at room temperature in continuous Ir/Co/Pt multilayers on SiO2/Si substrate without prior application of electric current or magne…

cond-mat.mtrl-sci2021★ 3 cited

Tailoring interfacial effect in multilayers with Dzyaloshinskii-Moriya interaction by helium ion irradiation

A. Sud, S. Tacchi, D. Sagkovits +13

We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He) ion irradiation. We report results from…

cond-mat.mtrl-sci2019★ 36 cited

Spin transport parameters of NbN thin films characterised by spin pumping experiments

K. Rogdakis, A. Sud, M. Amado +8

We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert…

cond-mat.mes-hall2018★ 13 cited

Near-field magneto-caloritronic nanoscopy on ferromagnetic nanostructures

E. Pfitzner, X. Hu, H. W. Schumacher +8

Near-field optical microscopy by means of infrared photocurrent mapping has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism a…

cond-mat.mes-hall2016★ 45 cited

Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

J. Sampaio, A. V. Khvalkovskiy, M. Kuteifan +5

In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As…

cond-mat.mtrl-sci2015★ 193 cited

Ultra-fast perpendicular Spin Orbit Torque MRAM

Murat Cubukcu, Olivier Boulle, Nikolaï Mikuszeit +14

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current densi…

cond-mat.mes-hall2015★ 42 cited

A Dzyaloshinskii-Moriya Anisotropy in Nanomagnets with in-plane Magnetization

M. Cubukcu, J. Sampaio, K. Bouzehouane +4

We report on a new source of in-plane anisotropy in nanomagnets due to the presence of Dzyaloshinskii-Moriya interaction (DMI). This anisotropy depends on the shape of the magnet,…

cond-mat.mtrl-sci2013★ 366 cited

Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction

Murat Cubukcu, Olivier Boulle, Marc Drouard +7

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magne…

cond-mat.mtrl-sci2013★ 94 cited

Spin Pumping and Inverse Spin Hall Effect in Germanium

J. -C. Rojas-Sánchez, M. Cubukcu, A. Jain +13

We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tun…

cond-mat.mtrl-sci2012★ 89 cited

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

A. Jain, J. -C. Rojas-Sanchez, M. Cubukcu +18

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact rol…

cond-mat.mtrl-sci2010★ 65 cited

Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

L. Thevenard, E. Peronne, C. Gourdon +6

The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE…

cond-mat.mtrl-sci2010★ 40 cited

Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains

Sanaz Haghgoo, Murat Cubukcu, Hans Jürgen Von Bardeleben +3

The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As te…