Ultra-fast perpendicular Spin Orbit Torque MRAM
arXiv:1509.02375 · doi:10.1109/TMAG.2017.2772185
Abstract
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications.
15 pages, 3 figures
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- Time- and spatially-resolved magnetization dynamics driven by spin-orbit torques
- Time resolved measurements of the switching trajectory of Pt/Co elements induced by spin-orbit torques
- Enhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve
- Scanning Kerr microscopy of current induced switching in Ta/CoFeB/MgO films with perpendicular magnetic anisotropy
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