Spin-orbit torques and magnetization switching in perpendicularly magnetized epitaxial Pd/Co2FeAl/MgO structures
arXiv:1906.11917 · doi:10.1103/PhysRevApplied.13.054039
Abstract
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writing, ii) high TMR ratio required for efficient reading and iii) strong perpendicular magnetic anisotropy for increased thermal stability.
14 pages, 6 figures
References in corpus (23)
- Spin torque switching with the giant spin Hall effect of tantalum
- Magnetic switching by spin torque from the spin Hall effect
- Spin Torque Ferromagnetic Resonance Induced by the Spin Hall Effect
- Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
- Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures
- Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO
- Quantitative characterization of the spin orbit torque using harmonic Hall voltage measurements
- Ultrafast magnetization switching by spin-orbit torques
- Spin torque study of the spin Hall conductivity and spin diffusion length in platinum thin films with varying resistivity
- Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers
- Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
- Time- and spatially-resolved magnetization dynamics driven by spin-orbit torques
- Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer
- Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers
- Ultra-fast perpendicular Spin Orbit Torque MRAM
- Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect
- Enhancement of the Anti-Damping Spin Torque Efficacy of Platinum by Interface Modification
- Magnetic and structural anisotropies of Co2FeAl Heusler alloy epitaxial thin films
- Interface enhanced spin-orbit torques and current-induced magnetization switching of Pd/Co/AlO layers
- Magnetoresistance of heavy and light metal/ferromagnet bilayers
- The domain wall spin torque-meter
- A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance
- Perpendicular magnetization reversal in Pt/[Co/Ni]/Al multilayers via the Spin Hall Effect of Pt