Switching of Perpendicular Magnetization by Spin-Orbit Torque

Abstract

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, I review recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials, and summarize the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications.

In press in Advanced Materials

References in corpus (31)

• Theory of spin Hall magnetoresistance
• Study of Intrinsic Spin Hall Effect and Orbital Hall Effect in 4d- and 5d- Transition Metals
• Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions
• Interface enhancement of Gilbert damping from first-principles
• Spin-orbit torques in heavy metal/ferromagnet bilayers with varying strength of interfacial spin-orbit coupling
• Deterministic magnetization switching using lateral spin-orbit torque
• Strong damping-like spin-orbit torque and tunable Dzyaloshinskii-Moriya interaction generated by low-resistivity Pd${}_{1-x}$Pt${}_x$ alloys
• Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product
• Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect
• Maximizing Spin-Orbit Torque Generated by the Spin Hall Effect of Pt
• Spin Hall Switching of the Magnetization in Ta/TbFeCo Structures with Bulk Perpendicular Anisotropy
• Spin-orbit torque switching of magnetic tunnel junctions for memory application
• Fully Spin-transparent magnetic interfaces enabled by insertion of a paramagnetic NiO layer
• Spin-orbit torques from interfacial spin-orbit coupling for various interfaces
• Current-induced magnetization switching in CoTb amorphous single layer
• Spin-memory loss due to spin-orbit coupling at ferromagnet/heavy-metal interfaces: Ab initio spin-density matrix approach
• Enhancing spin-orbit torque by strong interfacial scattering from ultra-thin insertion layers
• Observation of strong bulk damping-like spin-orbit torque in chemically disordered ferromagnetic single layers
• Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75
• Size-dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions
• Tunable Spin-Orbit Torques in Cu-Ta Binary Alloy Heterostructures
• Lack of simple correlation between switching current density and spin-orbit torque efficiency of perpendicularly magnetized spin-current generator/ferromagnet heterostructures
• Ballistic spin transport in the presence of interfaces with strong spin-orbit coupling
• Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures
• Unveiling the mechanism of bulk spin-orbit torques within chemically disordered Fe${}_x$Pt${}_{1-x}$ single layers
• Strong Spin-Orbit Torque Induced by the Intrinsic Spin Hall Effect in Cr1-xPtx
• Efficient Spin-Orbit Torque Generation in Semiconducting WTe2 with Hopping Transport
• Current-induced perpendicular effective magnetic field in magnetic heterostructures
• Boundary conditions for spin and charge diffusion in the presence of interfacial spin-orbit coupling
• Write asymmetry of spin-orbit torque memory induced by in-plane magnetic fields
• Strong bulk Dzyaloshinskii-Moriya interaction in composition-uniform centrosymmetric magnetic single layers