SOT-MRAM 300mm integration for low power and ultrafast embedded memories

Abstract

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.

arXiv commentpresented at VLSI2018 session C8-2

References in corpus (2)

• Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
• Time- and spatially-resolved magnetization dynamics driven by spin-orbit torques

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