196 citations · 419 across the 7 of their papers we have counts for
7 papers
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
K. Fan, S. V. Beek, G. Talmelli +11
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…
Pulse Shaping Strategies for Efficient Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque
Marco Hoffmann, Viola Krizakova, Vaishnavi Kateel +3
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random…
Spintronic logic: from transducers to logic gates and circuits
Christoph Adelmann, Florin Ciubotaru, Fanfan Meng +2
While magnetic solid-state memory has found commercial applications to date, magnetic logic has rather remained on a conceptual level so far. Here, we discuss open challenges of di…
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
K. Garello, F. Yasin, H. Hody +14
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonst…
SOT-MRAM 300mm integration for low power and ultrafast embedded memories
K. Garello, F. Yasin, S. Couet +16
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectu…
Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells
Thibaut Devolder, Joo-Von Kim, J. Swerts +6
We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque opera…
Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions
T. Devolder, Joo-Von Kim, F. Garcia-Sanchez +5
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshol…