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cond-mat.mes-hall2026
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
K. Fan, S. V. Beek, G. Talmelli +11
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…
cond-mat.mes-hall2018
SOT-MRAM 300mm integration for low power and ultrafast embedded memories
K. Garello, F. Yasin, S. Couet +16
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectu…