291 citations · 764 across the 19 of their papers we have counts for
19 papers
Impact of external magnetic fields on STT-MRAM
Bernard Dieny, Sanjeev Aggarwal, Vinayak Bharat Naik +15
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-M…
A quantum sensing metrology for magnetic memories
Vicent J Borràs, Robert Carpenter, Liza Žaper +5
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling…
Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Vaishnavi Kateel, Viola Krizakova, Siddharth Rao +10
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memo…
Spin-orbit torque switching of magnetic tunnel junctions for memory application
Viola Krizakova, Manu Perumkunnil, Sebastien Couet +2
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic m…
Tailoring the switching efficiency of magnetic tunnel junctions by the fieldlike spin-orbit torque
Viola Krizakova, Marco Hoffmann, Vaishnavi Kateel +5
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of…
Interplay of voltage control of magnetic anisotropy, spin transfer torque, and heat in the spin-orbit torque switching in three-terminal magnetic tunnel junctions
Viola Krizakova, Eva Grimaldi, Kevin Garello +4
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on t…