Offset fields in perpendicularly magnetized tunnel junctions
arXiv:1904.10170 · doi:10.1088/1361-6463/ab1b07
Abstract
We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide. The free layer offset field is thus accompanied with a shift of the free layer and reference layer ferromagnetic resonance frequencies. The shifts depend on the mutual orientation of the two magnetizations. The offset field decreases with the resistance area product of the tunnel oxide. Patterning the tunnel junction into an STT-MRAM disk-shaped cell changes substantially the offset field, as the reduction of the lateral dimension comes with the generation of stray fields by the reference and the hard layer. The experimental offset field compares best with the spatial average of the sum of these stray fields, thereby providing guidelines for the offset field engineering.
Special issue of J. Phys. D: Appl. Phys (2019) on STT-MRAM
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- Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements
- Spin-torque induced wall motion in perpendicularly magnetized discs: ballistic versus oscillatory behavior