109 citations · 229 across the 5 of their papers we have counts for
5 papers
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
K. Fan, S. V. Beek, G. Talmelli +11
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…
A quantum sensing metrology for magnetic memories
Vicent J Borràs, Robert Carpenter, Liza Žaper +5
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling…
Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
Y. C. Wu, K. Garello, W. Kim +11
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabl…
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
K. Garello, F. Yasin, H. Hody +14
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonst…
Offset fields in perpendicularly magnetized tunnel junctions
T. Devolder, R. Carpenter, S. Rao +4
We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange…