Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
arXiv:1907.08012 · doi:10.23919/VLSIT.2019.8776537
Abstract
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.
arXiv commentPresented at VLSI 2019 Circuit and Technology Symposium, JFS4p5
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