2 papers
cond-mat.mes-hall2021
Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
Y. C. Wu, K. Garello, W. Kim +11
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabl…
physics.app-ph2019
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
K. Garello, F. Yasin, H. Hody +14
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonst…